PBSS4160T,215 | NEXPERIA
Bipolar junction transistor, NPN, 900 mA, 60 V, SMD, SOT-23, PBSS4160T,215
Unit Price (€ / pc.)
0.0785 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS4160T,215, NEXPERIA
NPN low VCEsat transistor in a SOT23 plastic package.
Features
- Low collector-emitter saturation voltage
- High collector current capability
- High efficiency, reduces heat generation
- Reduces printed-circuit board area required
Applications
- Telecom infrastructure
- Industrial
- Automotive 42 V power
Technical specifications
| Saturation voltage | 110 mV | |
| Assembly | SMD | |
| Enclosure | SOT-23 | |
| Rated current | 1 A | |
| max.voltage between collector and base Vcbo | 80 V | |
| Version | NPN | |
| min. operating temperature | -65 °C | |
| Transit frequency fTmin | 220 MHz | |
| Min DC gain | 250 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 60 V | |
| Collector current | 900 mA | |
| Power dissipation | 0.27 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
| RoHS conform | Yes |