PBSS4350D,115 | NEXPERIA
Bipolar junction transistor, NPN, 3 A, 50 V, SMD, SOT-457, PBSS4350D,115
Unit Price (€ / pc.)
0.1952 € *
Available: 0 pcs.
Leadtime: 8 Weeks **
NPN transistor, PBSS4350D,115, NEXPERIA
NPN low VCEsat transistor in a SOT457 (SC-74) plastic package.
Features
- Low collector-emitter saturation voltage
- High current capability
- Improved device reliability due to reduced heat generation
- AEC-Q101 qualified
Applications
- Supply line switching circuits
- Battery management applications
- Heavy duty battery powered equipment
- DC/DC convertor applications
Technical specifications
| Version | NPN | |
| Enclosure | SOT-457 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 50 V | |
| max.voltage between collector and emitter Vceo | 50 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | 290 mV | |
| Transit frequency fTmin | 100 MHz | |
| Power dissipation | 0.6 W | |
| Collector current | 3 A | |
| Min DC gain | 200 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
