BAT1704E6327 | Infineon Technologies
Schottky rectifier diode, 4 V (RRM), 0.13 A, SOT-23, BAT1704E6327
Unit Price (€ / pc.)
0.0964 € *
Available: 221 pcs.
Leadtime: On Request **
Schottky diode, BAT1704E6327, Infineon Technologies
The BAT1704E6327 is a RF Schottky diode is a silicon low barrier N-type device.
Features
- Low leakage current
- Low signal distortion level
- High efficiency/low loss
- Low power consumption
Applications
- Power detection in wireless LAN and WiFi routers
- Power detection in mobile devices
- Power detection in wireless applications in ISM bands
- Mixer in 24 GHz passive radar system
Technical specifications
| Voltage V RRM (peak reverse voltage) | 4 V | |
| Number of diodes | 1 | |
| max. operating temperature | 150 °C | |
| Junction temperature (max.) | 150 °C | |
| min. operating temperature | -55 °C | |
| Forward Current | 0.13 A | |
| Capacity | 0.75 pF | |
| Enclosure | SOT-23 | |
| Version | schottky rectifier diode | |
| Assembly | SMD |
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Logistics
| Country of origin | CN |
| Original Packaging | Reel with 3,000 pieces |
| Customs tariff number | 85411000 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |