Infineon Technologies

IRFB4310PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 100 V, 130 A, TO-220, IRFB4310PBF

Order No.:  31S3231
MPN:
IRFB4310PBF
SP001566592
Series:  IRFB
EAN: 4099879034137
Infineon Technologies
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Unit Price (€ / pc.)
2.3205 € *
Available: 0 pcs.
Leadtime: 12 Weeks **
Add to Cart
Total Price:
2.32 € *
*incl. VAT plus shipping costs
**Subject to prior sale
500 pcs.
2.3205 €
Description

MOSFET, IRFB4310PBF, Infineon Technologies

Features

  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

Applications

  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits
Technical specifications
Version N channel
drain-source on resistance RDS (on) max @VGS=10V 7 mΩ
Gate Charge Qg @10V (nC) 1.7x10<sup>-7</sup> C
Enclosure TO-220
max. Voltage 100 V
Max. current 130 A
max. operating temperature 175 °C
min. operating temperature -55 °C
Assembly THT
Power loss 300 W
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Logistics
Country of origin CN
Customs tariff number 85412900
Original Packaging Bar with 100 pieces
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes
Variations
Search results: 1 item in 1 more variant
*incl. VAT plus shipping costs
Item description
Total
Price list
Availability
Power loss
Version
Assembly
max. Voltage
Max. current
min. operating temperature
max. operating temperature
drain-source on resistance RDS (on) max @VGS=10V
Enclosure
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 130 A, TO-220, IRFB4310PBF
Order No.:
 31S3231
Manufacturer:
 Infineon Technologies
Manufacturer SKU:
 IRFB4310PBF
Total Price: 2.32 € *
500 pcs.
2.3205 €
Available: 0 pcs.
Leadtime: 12 Weeks **
300 W
N channel
THT
100 V
130 A
-55 °C
175 °C
7 mΩ
TO-220
*incl. VAT plus shipping costs
**Subject to prior sale
Image may differ