Version
max. Voltage
Max. current
drain-source on resistance RDS (on) max @VGS=4,5V
drain-source on resistance RDS (on) max @VGS=10V
Enclosure
Power dissipation
Power loss
Assembly
min. operating temperature
max. operating temperature
342 items in 369 variations
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Item description
Total
Price list
Version
max. Voltage
Max. current
drain-source on resistance RDS (on) max @VGS=4,5V
drain-source on resistance RDS (on) max @VGS=10V
Enclosure
Power dissipation
Power loss
Assembly
min. operating temperature
max. operating temperature
COMSET Semiconductors N channel power MOS transistor, TO-220, IRF830PBF
Order No.:
 24S3296
Manufacturer:
 COMSET Semiconductors
Manufacturer SKU:
 IRF830PBF
Available: 41 pcs. Available in 5 Days: 675 pcs. Leadtime: 1 Week **
Total Price: 0.77 € *
1 pcs.
0.7723 €
100 pcs.
0.6866 €
1000 pcs.
0.6783 €
N channel
TO-220
74 W
THT
-55 °C
150 °C