Infineon Technologies

IRFB3206PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3206PBF

Order No.:  31S3221
MPN:
IRFB3206PBF
SP001566480
Series:  IRFB
EAN: 4099879034076
Infineon Technologies
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Unit Price (€ / pc.)
2.2253 € *
Available: 288 pcs.
Available in 5 Days: 100 pcs.
Leadtime: 1 Week **
Total Price:
2.23 € *
Quantity
Price per unit*
1 pcs.
2.2253 €
100 pcs.
1.7493 €
200 pcs.
1.6779 €
800 pcs.
1.5351 €
*incl. VAT plus shipping costs
**Subject to prior sale
Description

MOSFET, IRFB3206PBF, Infineon Technologies

Features

  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

Applications

  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits
Technical specifications
Version N channel
drain-source on resistance RDS (on) max @VGS=10V 3 mΩ
Gate Charge Qg @10V (nC) 1.2x10<sup>-7</sup> C
Enclosure TO-220
max. Voltage 60 V
Max. current 120 A
max. operating temperature 175 °C
min. operating temperature -55 °C
Assembly THT
Power loss 300 W
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Logistics
Country of origin CN
Customs tariff number 85412900
Original Packaging Bar with 100 pieces
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes