IPP80N03S4L03AKSA1 | Infineon Technologies
Infineon Technologies N channel OptiMOST power transistor, 30 V, 80 A, PG-TO220-3, IPP80N03S4L03AKSA1
Unit Price (€ / pc.)
1.666 € *
Available: 0 pcs.
Leadtime: 12 Weeks **
Power transistor, IPP80N03S4L03AKSA1, Infineon
OptiMOS Power-Transistor, ideal for high frequency switching and syncing with very low on-resistance and 100% avalanche tested.
Features
- Excellent gate charge
- Halogen-free
- Optimized technology for DC/DC converters
- Ideal for high frequency switching
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 2.4 mΩ | |
| drain-source on resistance RDS (on) max @VGS=4,5V | 3.2 mΩ | |
| Gate Charge Qg @10V (nC) | 1.1x10<sup>-7</sup> C | |
| Enclosure | PG-TO220-3 | |
| max. Voltage | 30 V | |
| Max. current | 80 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Power loss | 136 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 50 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
