IPW60R180C7XKSA1 | Infineon Technologies
Infineon Technologies N channel CoolMOSC7 power transistor, 600 V, 13 A, TO-247, IPW60R180C7XKSA1
Unit Price (€ / pc.)
4.1174 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
4.12 € *
Price list
Quantity
Price per unit*
1 pcs.
4.1174 €
10 pcs.
3.6533 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IPW60R180C7XKSA1, Infineon Technologies
The IPW60R180C7XKSA1 is a high voltage power MOSFET that is designed according to the super junction.
Features
- Suitable for hard and soft switching
- Increased MOSFET dv/dt ruggedness
- Qualified for industrial grade applications
Applications
- PFC stages and PWM stages for high power/performance
- SMPS
- Telecom
- Solar
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 180 mΩ | |
| Gate Charge Qg @10V (nC) | 2.4x10<sup>-8</sup> C | |
| Enclosure | TO-247 | |
| max. Voltage | 600 V | |
| Max. current | 13 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Power loss | 68 W |
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Logistics
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
| Original Packaging | Bar with 30 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
