The SFH618A-4 features a high current transfer ratio, low coupling capacitance and high isolation voltage. This product has a GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling device is designed for signal transmission between two electrically separated circuits.
Features
Applications
Rise time | 3.5 s | |
Number of channels | 1 | |
Output current | 50 mA | |
Enclosure | DIP-4 | |
Isolation voltage | 5.3 kV | |
max. operating temperature | 100 °C | |
min. operating temperature | -55 °C | |
Assembly | THT | |
Fall time | 5 s |
Country of origin | MY |
Customs tariff number | 85414900 |
Original Packaging | Bar with 100 pieces |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |
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