TIP111G | onsemi
Bipolar junction transistor, NPN, 2 A, 80 V, THT, TO-220, TIP111G
Unit Price (€ / pc.)
0.357 € *
Available: 8 pcs.
Transistor, TIP111G, ON Semiconductor
Designed for general−purpose amplifier and low−speed switching applications.
Features
- Monolithic construction
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Transit frequency fTmin | 4 MHz | |
| max. operating temperature | 150 °C | |
| Saturation voltage | 2.5 V | |
| Min DC gain | 500 mA | |
| Assembly | THT | |
| max.voltage between collector and emitter Vceo | 80 V | |
| min. operating temperature | -65 °C | |
| max.voltage between collector and base Vcbo | 80 V | |
| Power dissipation | 50 W | |
| Enclosure | TO-220 | |
| Collector current | 2 A | |
| Version | NPN | |
| Rated current | 2 A |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Bar with 50 pieces |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| Substance description | Lead |
| RoHS conform | Yes |
| SVHC free | No |