PBSS8110T,215 | NEXPERIA
Bipolar junction transistor, NPN, 1 A, 100 V, SMD, SOT-23, PBSS8110T,215
Unit Price (€ / pc.)
0.2059 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS8110T,215, NEXPERIA
NPN low VCEsat transistor in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
Features
- Low collector-emitter saturation voltage
- High collector current capability: IC and ICM
Applications
- Telecom infrastructure
- Industrial
- Supply line switching
- Battery charger
- LCD backlighting
- Driver in low supply voltage applications
Technical specifications
| Max DC amplification | 500 mA | |
| Saturation voltage | 200 mV | |
| Assembly | SMD | |
| Enclosure | SOT-23 | |
| max.voltage between collector and base Vcbo | 120 V | |
| Version | NPN | |
| min. operating temperature | -65 °C | |
| Transit frequency fTmin | 100 MHz | |
| Min DC gain | 150 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 100 V | |
| Collector current | 1 A | |
| Power dissipation | 0.3 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
| RoHS conform | Yes |