PBSS301PD,115 | NEXPERIA
Bipolar junction transistor, PNP, -4 A, -20 V, SMD, SOT-457, PBSS301PD,115
Unit Price (€ / pc.)
0.357 € *
Available: 0 pcs.
Leadtime: On Request **
PNP transistor, PBSS301PD,115, NEXPERIA
PNP low VCEsat breakthrough in small signal (BISS) transistor in a SOT457 (SC-74) surface-mounted device (SMD) plastic package.
Features
- Very low collector-emitter saturation resistance
- Ultra low collector-emitter saturation voltage
- High efficiency due to less heat generation
Applications
- Power management functions
- Charging circuits
- Power switches
- Thin Film Transistor (TFT) backlight inverter
Technical specifications
| Version | PNP | |
| Enclosure | SOT-457 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | -20 V | |
| max.voltage between collector and emitter Vceo | -20 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | -280 mV | |
| Transit frequency fTmin | 80 MHz | |
| Power dissipation | 0.36 W | |
| Collector current | -4 A | |
| Min DC gain | 250 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Rolle mit 3.000 Stück |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |