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IRFB4310PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 100 V, 130 A, TO-220, IRFB4310PBF

Order No.: 31S3231
EAN: 4099879034137
MPN:
IRFB4310PBF
SP001566592
Series: IRFB
Infineon Technologies
IRFB4310PBF Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 100 V
Max. current 130 A
drain-source on resistance RDS (on) max @VGS=10V 7 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
2.3205 € *
Standard delivery time from the manufacturer is: 13 Weeks
Total Price:
1,160.25 € *
*incl. VAT plus shipping costs
Subject to prior sale
500 pcs.
2.3205 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IRFB4310PBF, Infineon Technologies

Features

  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

Applications

  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits
Technical specifications
max. Voltage 100 V
Power loss 300 W
drain-source on resistance RDS (on) max @VGS=10V 7 mΩ
Enclosure TO-220
Max. current 130 A
Gate Charge Qg @10V (nC) 1.7x10<sup>-7</sup> C
max. operating temperature 175 °C
Assembly THT
min. operating temperature -55 °C
Version N channel
Articles of same specification 0
Logistics
Country of origin CN
Customs tariff number 85412900
Original Packaging Bar with 100 pieces
Compliance
RoHS conform Yes
SVHC free Yes
Date of RoHS guidelines 3/31/15