IRFB3306PBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3306PBF
Unit Price (€ / pc.)
0.8211 € *
Available in 5 Days: 750 pcs. - if ordered today
MOSFET, IRFB3306PBF, Infineon Technologies
Features
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Applications
- High efficiency synchronous rectification in SMPS
- Uninterruptible power supply
- High speed power switching
- Hard switched and high frequency circuits
Technical specifications
| max. Voltage | 60 V | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 4.2 mΩ | |
| Enclosure | TO-220 | |
| Max. current | 120 A | |
| Power loss | 230 W | |
| Assembly | THT | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 8.5x10<sup>-8</sup> C |
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Logistics
| Customs tariff number | 85412900 |
| Country of origin | CN |
Compliance
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |