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IRFB3306PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3306PBF

Order No.: 31S3223
EAN: 4099879034083
MPN:
IRFB3306PBF
SP001556002
Series: IRFB
Infineon Technologies
IRFB3306PBF Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 60 V
Max. current 120 A
drain-source on resistance RDS (on) max @VGS=10V 4.2 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.8211 € *
Available in 5 Days: 690 pcs. - if ordered today
Total Price:
8.21 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
0.8211 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IRFB3306PBF, Infineon Technologies

Features

  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

Applications

  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits
Technical specifications
max. Voltage 60 V
max. operating temperature 175 °C
min. operating temperature -55 °C
drain-source on resistance RDS (on) max @VGS=10V 4.2 mΩ
Enclosure TO-220
Max. current 120 A
Power loss 230 W
Assembly THT
Version N channel
Gate Charge Qg @10V (nC) 8.5x10<sup>-8</sup> C
Articles of same specification 0
Logistics
Customs tariff number 85412900
Country of origin CN
Compliance
RoHS conform Yes
SVHC free Yes
Date of RoHS guidelines 3/31/15