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IRFB3077PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 75 V, 120 A, TO-220, IRFB3077PBF

Order No.: 31S3220
EAN: 4099879034069
MPN:
IRFB3077PBF
SP001575594
Series: NFET_IRFXXX
Infineon Technologies
IRFB3077PBF Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 75 V
Max. current 120 A
drain-source on resistance RDS (on) max @VGS=10V 3.3 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
1.5351 € *
Available in 5 Days: 1,180 pcs. - if ordered today
Total Price:
15.35 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
1.5351 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IRFB3077PBF, Infineon Technologies

Features

  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

Applications

  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits
Technical specifications
max. Voltage 75 V
max. operating temperature 175 °C
min. operating temperature -55 °C
drain-source on resistance RDS (on) max @VGS=10V 3.3 mΩ
Enclosure TO-220
Max. current 120 A
Power loss 370 W
Assembly THT
Version N channel
Gate Charge Qg @10V (nC) 1.6x10<sup>-7</sup> C
Articles of same specification 0
Logistics
Customs tariff number 85412900
Country of origin CN
Compliance
RoHS conform Yes
SVHC free Yes
Date of RoHS guidelines 3/31/15