IRF4905PBF | Infineon Technologies
Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -74 A, TO-220, IRF4905PBF
MOSFET, IRF4905PBF, Infineon Technologies
The IRF4905PBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- P-channel
Applications
- DC motors
- Inverters
- Lighting
- Load switches
- Battery powered applications
Version | P-channel | |
drain-source on resistance RDS (on) max @VGS=10V | 20 mΩ | |
Gate Charge Qg @10V (nC) | 1.8x10<sup>-7</sup> C | |
Enclosure | TO-220 | |
max. Voltage | -55 V | |
Max. current | -74 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | THT | |
Power loss | 200 W |
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Bar with 50 pieces |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |