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IRF3808PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 75 V, 140 A, TO-220, IRF3808PBF

Order No.: 31S3104
EAN: 4099879034021
MPN:
IRF3808PBF
SP001563250
Series: NFET_IRFXXX
Infineon Technologies
IRF3808PBF Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 75 V
Max. current 140 A
drain-source on resistance RDS (on) max @VGS=10V 7 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
1.1305 € *
Available in 5 Days: 920 pcs. - if ordered today
Total Price:
11.31 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
1.1305 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IRF3808PBF, Infineon Technologies

The IRF3808PBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The design is an extremely efficient and reliable for use in a wide variety of applications.

Features

  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dv/dt rating
  • Fast switching
  • Avalanche rated

Applications

  • Industrial motor drive
Technical specifications
max. Voltage 75 V
Power loss 330 W
drain-source on resistance RDS (on) max @VGS=10V 7 mΩ
Enclosure TO-220
Max. current 140 A
Gate Charge Qg @10V (nC) 1.5x10<sup>-7</sup> C
max. operating temperature 150 °C
Assembly THT
min. operating temperature -40 °C
Version N channel
Articles of same specification 0
Logistics
Country of origin PH
Customs tariff number 85412900
Original Packaging Bar with 202 pieces
Compliance
RoHS conform Yes
SVHC free Yes
Date of RoHS guidelines 3/31/15