IRF3205PBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 110 A, TO-220, IRF3205PBF
Unit Price (€ / pc.)
1.0115 € *
Available: 582 pcs.
Available in 5 Days: 3,280 pcs. - if ordered today
Total Price:
1.01 € *
Price list
Quantity
Price per unit*
1 pcs.
1.0115 €
10 pcs.
0.9877 €
100 pcs.
0.9044 €
500 pcs.
0.7854 €
1000 pcs.
0.7021 €
*incl. VAT plus shipping costs
Subject to prior sale
MOSFET, IRF3205PBF, Infineon Technologies
The IRF3205PBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power loss | 200 W | |
| Enclosure | TO-220 | |
| Gate Charge Qg @10V (nC) | 0.000000146 C | |
| Max. current | 110 A | |
| max. Voltage | 55 V | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Version | N channel | |
| Assembly | THT | |
| drain-source on resistance RDS (on) max @VGS=10V | 8 mΩ |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Bar with 50 pieces |
| Country of origin | MX |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |