IPT015N10N5ATMA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS5 power transistor, 100 V, 300 A, HSOF, IPT015N10N5ATMA1
Unit Price (€ / pc.)
2.5228 € *
Standard delivery time from the manufacturer is: 18 Weeks
MOSFET, IPT015N10N5ATMA1, Infineon Technologies
The IPT015N10N5ATMA1 is a power MOSFET that is otimized for high current applications up to 300 A such as forklifts or electric vehicles.
Features
- Ideal for high frequency switching
- Excellent gate charge
- Very low on-resistance
- N-channel, normal level
Applications
- Telecom
- Server
- Solar
- Low voltage drives
- Low voltage vehicles
- Adapter
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power loss | 375 W | |
| Max. current | 300 A | |
| drain-source on resistance RDS (on) max @VGS=10V | 2 mΩ | |
| max. operating temperature | 175 °C | |
| max. Voltage | 100 V | |
| Gate Charge Qg @10V (nC) | 0.000000169 C | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| Enclosure | HSOF | |
| Version | N channel |
Download
Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |