BSC120N03MSGATMA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 M series power MOSFET, 30 V, 11 A, PG-TDSON-8, BSC120N03MSGATMA1
Unit Price (€ / pc.)
0.2249 € *
Standard delivery time from the manufacturer is: 26 Weeks
MOSFET, BSC120N03MSGATMA1, Infineon Technologies
Features
- Optimized for 5V driver application
- Low FOM for high frequency SMPS
- N-channel
- Very low on-resistance
Applications
- Onboard charger
- Notebook
- Mainboard
- DC-DC
- VRD/VRM
- Motor control
- LED
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 30 V | |
| drain-source on resistance RDS (on) max @VGS=10V | 12 mΩ | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Gate Charge Qg @10V (nC) | 1.5x10<sup>-8</sup> C | |
| Max. current | 11 A | |
| Enclosure | PG-TDSON-8 | |
| Assembly | SMD | |
| Version | N channel |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Reel with 1 piece |
| Customs tariff number | 85412900 |