BFR92WE6327XT | Infineon Technologies
Bipolar junction transistor, NPN, 45 mA, 15 V, SMD, SOT-323, BFR92WE6327XT
Discontinued
Unit Price (€ / pc.)
0.2023 € *
Available: 279 pcs.
Leadtime: On Request **
Total Price:
5.06 € *
Price list
Quantity
Price per unit*
25 pcs.
0.2023 €
125 pcs.
0.1749 €
500 pcs.
0.1547 €
2000 pcs.
0.1416 €
5000 pcs.
0.1321 €
*incl. VAT plus shipping costs
**Subject to prior sale
Bipolar transistor, BFR92WE6327XT, Infineon Technologies
The BFR92WE6327XT is a low noise silicon bipolar RF transistor that is used for broadband amplifiers and fast non-saturated switches.
Features
- Low current gain
- High collector-emitter breakdown voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For broadband amplifiers
- For fast non-saturated switches at collector currents
Technical specifications
| Version | NPN | |
| Enclosure | SOT-323 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 20 V | |
| max.voltage between collector and emitter Vceo | 15 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Rated current | 30 mA | |
| Transit frequency fTmin | 5 GHz | |
| Power dissipation | 0.28 W | |
| Collector current | 45 mA | |
| Max DC amplification | 140 mA | |
| Min DC gain | 70 mA |
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Logistics
| Country of origin | MY |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
