BFR183E6327 | Infineon Technologies

Bipolar junction transistor, NPN, 65 mA, 12 V, SMD, SOT-23, BFR183E6327

Order No.: 16S9825
EAN: 4099879029010
MPN:
BFR183E6327
Series: BFR
BFR183E6327 Infineon Technologies Bipolar Transistors
Image may differ
Unit Price (€ / pc.)
0.1809 € *
Standard delivery time from the manufacturer is: On Request
Total Price:
542.64 € *
*incl. VAT plus shipping costs
Subject to prior sale
3000 pcs.
0.1809 €

Bipolar transistor, BFR183E6327, Infineon Technologies

The BFR183E6327 is a low noise silicon bipolar RF transistor that is used for high-gain broadband amplifiers.

Features

  • Low current gain
  • High collector-emitter breakdown voltage
  • Low noise
  • Pb-free and RoHs-compliant

Applications

  • For low noise applications
  • For high gain broadbans amplifiers
Technical specifications
Max DC amplification 140 mA
Assembly SMD
Enclosure SOT-23
max.voltage between collector and base Vcbo 20 V
Version NPN
min. operating temperature -55 °C
Transit frequency fTmin 8 GHz
Min DC gain 70 mA
max. operating temperature 150 °C
max.voltage between collector and emitter Vceo 12 V
Collector current 65 mA
Power dissipation 0.45 W
Logistics
Country of origin MY
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
SVHC free Yes
RoHS conform Yes