BFR106E6327 | Infineon Technologies
Bipolar junction transistor, NPN, 210 mA, 16 V, SMD, SOT-23, BFR106E6327
Unit Price (€ / pc.)
0.2178 € *
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Leadtime: On Request **
Bipolar transistor, BFR106E6327, Infineon Technologies
The BFR106E6327 is a low noise silicon bipolar RF transistor that is used for UHF/VHF applications.
Features
- Low current gain
- High collector-emitter breakdown voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For UHF / VHF applications
- For linear broadband and antenna amplifiers
Technical specifications
| Version | NPN | |
| Enclosure | SOT-23 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 20 V | |
| max.voltage between collector and emitter Vceo | 16 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Transit frequency fTmin | 5 GHz | |
| Power dissipation | 0.7 W | |
| Collector current | 210 mA | |
| Max DC amplification | 140 mA | |
| Min DC gain | 70 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |