BFR106E6327 | Infineon Technologies

Bipolar junction transistor, NPN, 210 mA, 16 V, SMD, SOT-23, BFR106E6327

Order No.: 16S9780
EAN: 4099879029003
MPN:
BFR106E6327
Series: BFR
BFR106E6327 Infineon Technologies Bipolar Transistors
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Unit Price (€ / pc.)
0.2178 € *
Standard delivery time from the manufacturer is: On Request
Total Price:
653.31 € *
*incl. VAT plus shipping costs
Subject to prior sale
3000 pcs.
0.2178 €

Bipolar transistor, BFR106E6327, Infineon Technologies

The BFR106E6327 is a low noise silicon bipolar RF transistor that is used for UHF/VHF applications.

Features

  • Low current gain
  • High collector-emitter breakdown voltage
  • Low noise
  • Pb-free and RoHs-compliant

Applications

  • For UHF / VHF applications
  • For linear broadband and antenna amplifiers
Technical specifications
Max DC amplification 140 mA
Assembly SMD
Enclosure SOT-23
max.voltage between collector and base Vcbo 20 V
Version NPN
min. operating temperature -55 °C
Transit frequency fTmin 5 GHz
Min DC gain 70 mA
max. operating temperature 150 °C
max.voltage between collector and emitter Vceo 16 V
Collector current 210 mA
Power dissipation 0.7 W
Logistics
Country of origin CN
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
SVHC free Yes
RoHS conform Yes