BFP843FH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 55 mA, 2.25 V, SMD, TSFP-4, BFP843FH6327XTSA1
Unit Price (€ / pc.)
0.3213 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP843FH6327XTSA1, Infineon Technologies
The BFP843FH6327XTSA1 is a very low noise wideband NPN bipolar RF transistor. The device is based on a reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology.
Features
- High gain
- High ESD robustness
- Low noise
- Low power consumption
Applications
- As low noise amplifier (LNA) in wireless communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
- Satellite navigation systems and satellite C-band LNB
- Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
- Dedicated short range communication (DSRC) systems: WLAN EEE802.11p
Technical specifications
| Max DC amplification | 450 mA | |
| Assembly | SMD | |
| Enclosure | TSFP-4 | |
| max.voltage between collector and base Vcbo | 2.9 V | |
| Version | NPN | |
| min. operating temperature | -55 °C | |
| Transit frequency fTmin | 1 GHz | |
| Min DC gain | 150 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 2.25 V | |
| Collector current | 55 mA | |
| Power dissipation | 0.125 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |