DI120SIC089D7 | Diotec Semiconductor
Diotec Semiconductor N channel SiC MOSFET, 1200 V, 46 A, TO-263-7, DI120SIC089D7
Order No.: 10S9432
MPN:
DI120SIC089D7
NCNR (non cancelable / non returnable)
Unit Price (€ / pc.)
2.38 € *
Standard delivery time from the manufacturer is: 9 Weeks
Silicon Carbide (SiC) MOSFET, DI120SIC089D7, Diotec Semiconductor
Features
- Trench Technology
- Zero Turn-off Gate Voltage
- Low on state resistance
- Fast switching times
- Low gate charge
- Avalanche rated
- 100% Avalanche tested
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Charging Station
- Inverter
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Version | N channel | |
| max. Voltage | 1200 V | |
| Max. current | 46 A | |
| Enclosure | TO-263-7 | |
| Power loss | 263 W | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| max. operating temperature | 175 °C |
Download
Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |