ZTX853 | Diodes
Bipolar junction transistor, NPN, 4 A, 100 V, THT, e-line, ZTX853
Unit Price (€ / pc.)
0.7259 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, ZTX853, DIODES
NPN silicon planar medium power high current transistor, E-Line.
Technical specifications
| Max DC amplification | 300 mA | |
| Saturation voltage | 200 mV | |
| Assembly | THT | |
| Enclosure | e-line | |
| max.voltage between collector and base Vcbo | 200 V | |
| Version | NPN | |
| min. operating temperature | -55 °C | |
| Transit frequency fTmin | 130 MHz | |
| Min DC gain | 100 mA | |
| max. operating temperature | 200 °C | |
| max.voltage between collector and emitter Vceo | 100 V | |
| Collector current | 4 A | |
| Power dissipation | 1.58 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Bulk with 4,000 pieces |
Compliance
| SVHC free | Yes |
| RoHS conform | Yes |