BDV67B | COMSET Semiconductors
Bipolar junction transistor, NPN, 16 A, 100 V, THT, TO-3P, BDV67B
Order No.: 15S5018
EAN: 4099879028532
MPN:
BDV67B
Unit Price (€ / pc.)
8.7108 € *
Available: 5 pcs.
Leadtime: 6 Weeks **
Total Price:
8.71 € *
Price list
Quantity
Price per unit*
1 pcs.
8.7108 €
10 pcs.
6.2237 €
25 pcs.
5.3193 €
50 pcs.
4.6291 €
100 pcs.
4.2126 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BDV67B, COMSET
This is a silicon epitaxial base transistors mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.
Features
- Compliance to RoHS
Technical specifications
| Version | NPN | |
| Enclosure | TO-3P | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 120 V | |
| max.voltage between collector and emitter Vceo | 100 V | |
| min. operating temperature | -65 °C | |
| Assembly | THT | |
| Rated current | 16 A | |
| Saturation voltage | 2 V | |
| Power dissipation | 200 W | |
| Collector current | 16 A | |
| Min DC gain | 1000 mA |
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Logistics
| Country of origin | MY |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 25 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
