BDV67C-T | COMSET Semiconductors

Bipolar junction transistor, NPN, 16 A, 120 V, THT, TO-3PN, BDV67C-T

Order No.: 15S5020
EAN: 4099879028549
MPN:
BDV67C-T
COMSET Semiconductors
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Unit Price (€ / pc.)
4.9028 € *
Available: 0 pcs.
Leadtime: 6 Weeks **
Total Price:
4.90 € *
Price list
Quantity
Price per unit*
1 pcs.
4.9028 €
10 pcs.
4.3197 €
100 pcs.
3.7842 €
250 pcs.
3.6414 €
1000 pcs.
3.4034 €
*incl. VAT plus shipping costs
**Subject to prior sale

NPN power transistor, BDV67C-T, COMSET

This is a silicon epitaxial base transistors mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications.

Features

  • Compliance to RoHS
Technical specifications
Version NPN
Enclosure TO-3PN
max. operating temperature 150 °C
max.voltage between collector and base Vcbo 140 V
max.voltage between collector and emitter Vceo 120 V
min. operating temperature -65 °C
Assembly THT
Saturation voltage 2 V
Power dissipation 200 W
Collector current 16 A
Min DC gain 1000 mA
Logistics
Country of origin CN
Customs tariff number 85412900
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes
Variations
1 item in 2 variations
*incl. VAT plus shipping costs