Version
max. Voltage
Enclosure
Assembly
Max. current
drain-source on resistance RDS (on) max @VGS=10V
max. operating temperature
Power loss
Collector current
drain-source on resistance RDS (on) max @VGS=4,5V
min. operating temperature
Rated current
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Manufacturer: Vishay  
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Item description
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Price list
Version
max. Voltage
Enclosure
Assembly
Max. current
drain-source on resistance RDS (on) max @VGS=10V
max. operating temperature
Power loss
Collector current
drain-source on resistance RDS (on) max @VGS=4,5V
min. operating temperature
Rated current
Vishay N channel TrenchFET power MOSFET, 80 V, 60 A, SOIC-8, SIR826ADP-T1-GE3
Order No.:
 24S8210
Manufacturer:
 Vishay
Manufacturer SKU:
 SIR826ADP-T1-GE3
Available: 0 pcs. Leadtime: On Request ** Next delivery: 3,000 pcs. on 2024-11-22
Total Price: 2.28 € *
1 pcs.
2.2848 €
25 pcs.
1.9516 €
100 pcs.
1.7850 €
250 pcs.
1.7017 €
1000 pcs.
1.5589 €
N channel
80 V
SOIC-8
SMD
60 A
5.5 mΩ
150 °C
104 W
-55 °C