SIS488DN-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 40 V, 40 A, PowerPAK 1212-8, SIS488DN-T1-GE3
Brand: Vishay
SKU: 24S8238
Availability: InStock

Vishay N channel TrenchFET power MOSFET, 40 V, 40 A, PowerPAK 1212-8, SIS488DN-T1-GE3

Order No.: 24S8238

EAN: 4099879033758

MPN:

SIS488DN-T1-GE3

Series: SI

Image may differ

Key Specification:

Version N channel

max. Voltage 40 V

Max. current 40 A

drain-source on resistance RDS (on) max @VGS=10V 5.5 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.7616 € *

Standard delivery time from the manufacturer is: 35 Weeks

Total Price:

2,284.80 € *

*incl. VAT plus shipping costs

Subject to prior sale

Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiS488DN, 40 V, 5.5 mohm, 40 A, 9.8 nC, PowerPAK 1212-8

Technical specifications

Filter	Property	Value
	Gate Charge Qg @10V (nC)	3.2x10<sup>-8</sup> C
	Assembly	SMD
	drain-source on resistance RDS (on) max @VGS=10V	5.5 mΩ
	max. Voltage	40 V
	Version	N channel
	max. operating temperature	150 °C
	Enclosure	PowerPAK 1212-8
	min. operating temperature	-55 °C
	Max. current	40 A