SI2333DDS-T1-GE3 | Vishay
Vishay P-channel MOSFET, -12 V, -6 A, TO-236, SI2333DDS-T1-GE3
Unit Price (€ / pc.)
0.2142 € *
Available: 0 pcs.
Leadtime: 8 Weeks **
MOSFET, SI2333DDS-T1-GE3, Vishay
SMD MOSFET PFET, -12 V, -6 A, 28 mΩ, 150 °C, TO-236, SI2333DDS-T1-GE3.
Applications
- Load switch
- Battery switch
Technical specifications
| Version | P-Kanal | |
| drain-source on resistance RDS (on) max @VGS=10V | 28 mΩ | |
| Gate Charge Qg @10V (nC) | 3.5x10<sup>-8</sup> C | |
| Enclosure | TO-236 | |
| max. Voltage | -12 V | |
| Max. current | -6 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 1.7 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Rolle mit 3.000 Stück |
Compliance
| RoHS conform | Yes |
| SVHC free | Yes |