MJD112T4 | STMicroelectronics
Bipolar junction transistor, NPN, 2 A, 100 V, SMD, TO-252, MJD112T4
Order No.: 63S4751
EAN: 4099879031631
MPN:
MJD112T4
Unit Price (€ / pc.)
0.3332 € *
Available: 0 pcs.
Leadtime: 14 Weeks **
Complementary transistor, MJD112T4, STMicroelectronics
This product is suitable for linear and switching industrial equipment.
Features
- Good linearity
- High frequency
- Monolithic darlington configuration with integrated antiparallel collector-emitter diode
Technical specifications
| Version | NPN | |
| Enclosure | TO-252 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 100 V | |
| max.voltage between collector and emitter Vceo | 100 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | 2 V | |
| Transit frequency fTmin | 25 MHz | |
| Power dissipation | 20 W | |
| Collector current | 2 A | |
| Min DC gain | 1000 mA |
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Logistics
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
| Original Packaging | Reel with 5,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
