BD681 | STMicroelectronics
Bipolar junction transistor, NPN, 4 A, 100 V, THT, TO-126, BD681
Unit Price (€ / pc.)
0.7616 € *
Available: 0 pcs.
Next delivery: 250 pcs. on 2024-05-16
Available in 5 Days: 8,600 pcs.
Leadtime: 1 Week **
Total Price:
0.76 € *
Price list
Quantity
Price per unit*
1 pcs.
0.7616 €
10 pcs.
0.4760 €
50 pcs.
0.3808 €
250 pcs.
0.3213 €
1000 pcs.
0.2904 €
*incl. VAT plus shipping costs
**Subject to prior sale
Complementary transistor, BD681, STMicroelectronics
This product is suitable for linear and switching industrial equipment.
Features
- Good linearity
- High frequency
- Monolithic darlington configuration with integrated antiparallel collector-emitter diode
Technical specifications
| Version | NPN | |
| Enclosure | TO-126 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 100 V | |
| max.voltage between collector and emitter Vceo | 100 V | |
| min. operating temperature | -65 °C | |
| Assembly | THT | |
| Rated current | 4 A | |
| Transit frequency fTmin | 1 MHz | |
| Power dissipation | 40 W | |
| Collector current | 4 A | |
| Min DC gain | 750 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 50 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
