FDMS8D8N15C | onsemi
Onsemi N channel shielded PowerGate trench MOSFET, 150 V, 85 A, power56, FDMS8D8N15C
Unit Price (€ / pc.)
2.5228 € *
Available: 0 pcs.
Leadtime: On Request **
Power trench , FDMS8D8N15C, onsemi
The FDMS8D8N15C is produced using advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Technical specifications
| Version | N-Kanal | |
| drain-source on resistance RDS (on) max @VGS=10V | 8.8 mΩ | |
| Gate Charge Qg @10V (nC) | 3.8x10<sup>-8</sup> C | |
| Enclosure | Power56 | |
| max. Voltage | 150 V | |
| Max. current | 85 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD |
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Logistics
| Customs tariff number | 85412900 |
| MSL | MSL 3 |
| Original Packaging | Rolle mit 3.000 Stück |
Compliance
| RoHS conform | Yes |
| SVHC free | Yes |