PMBT5550,215 | NEXPERIA
Bipolar junction transistor, NPN, 300 mA, 140 V, SMD, SOT-23, PMBT5550,215
Unit Price (€ / pc.)
0.0464 € *
Available: 0 pcs.
Leadtime: On Request **
NPN high-voltage transistor, PMBT5550,215, NXP
NPN high-voltage transistor in a SOT23 plastic package
Features
- Low current (max. 300 mA)
- Low voltage (max. 140 V)
Applications
- Telephony
Technical specifications
| Saturation voltage | 150 mV | |
| Assembly | SMD | |
| Enclosure | SOT-23 | |
| Rated current | 300 mA | |
| max.voltage between collector and base Vcbo | 160 V | |
| Version | NPN | |
| min. operating temperature | -65 °C | |
| Transit frequency fTmin | 300 MHz | |
| Min DC gain | 60 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 140 V | |
| Collector current | 300 mA | |
| Power dissipation | 0.25 W |
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Logistics
| Country of origin | MY |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| Substance description | Lead monoxide ]lead(II) oxide] |
| SVHC free | No |
| RoHS conform | Yes |