PMBT2907A,215 | NEXPERIA
Bipolar junction transistor, PNP, -600 mA, -60 V, SMD, SOT-457, PMBT2907A,215
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PNP switching transistor, PMBT2907A,215, NXP
PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic packag
Features
- Single general-purpose switching transistor
- AEC-Q101 qualified
Applications
- Switching and linear amplification
Technical specifications
| Version | PNP | |
| Enclosure | SOT-457 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | -60 V | |
| max.voltage between collector and emitter Vceo | -60 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | -400 mV | |
| Transit frequency fTmin | 200 MHz | |
| Power dissipation | 0.25 W | |
| Collector current | -600 mA | |
| Max DC amplification | 300 mA | |
| Min DC gain | 100 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Rolle mit 3.000 Stück |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |