PDTA124TT,215 | NEXPERIA
Bipolar junction transistor, PNP, -50 V, SMD, TO-263AB, PDTA124TT,215
As a private customer, you can buy this item as soon as we have it back in stock.
PNP resistor-equipped transistor, PDTA124TT,215, NXP
PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).
Features
- Built-in bias resistor
- Simplified circuit design
- Reduction of component count
- Reduced pick and place costs
Technical specifications
| Version | PNP | |
| Enclosure | TO-263AB | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | -50 V | |
| max.voltage between collector and emitter Vceo | -50 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | -150 mV | |
| Power dissipation | 0.25 W | |
| Min DC gain | 100 mA |
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Logistics
| Customs tariff number | 85412900 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
