PBSS5350X,115 | NEXPERIA
Bipolar junction transistor, PNP, -3 A, -50 V, SMD, TO-243AA, PBSS5350X,115
Unit Price (€ / pc.)
0.2463 € *
Available: 0 pcs.
Leadtime: On Request **
PNP transistor, PBSS5350X,115, NEXPERIA
PNP low VCEsat transistor in a SOT89 plastic package.
Features
- Low collector-emitter saturation voltage
- High collector current capability
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- AEC-Q101 qualified
Applications
- Power management
- Peripheral drivers
Technical specifications
| Max DC amplification | 450 mA | |
| Saturation voltage | -390 mV | |
| Assembly | SMD | |
| Enclosure | TO-243AA | |
| max.voltage between collector and base Vcbo | -50 V | |
| Version | PNP | |
| min. operating temperature | -65 °C | |
| Transit frequency fTmin | 100 MHz | |
| Min DC gain | 200 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | -50 V | |
| Collector current | -3 A | |
| Power dissipation | 0.55 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1,000 pieces |
Compliance
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
| RoHS conform | Yes |