IXBN75N170 | Littelfuse
IGBT, 1700 V, 75 A, SOT-227, Littelfuse IXBN75N170
Order No.: 74P0734
EAN: 4099891775995
MPN:
IXBN75N170
Unit Price (€ / pc.)
75.0771 € *
Standard delivery time from the manufacturer is: 39 Weeks
IGBT, IXBN75N170, Littelfuse
BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device.
Features
- High power density
- High blocking voltage
- Low conduction losses
- MOS gate turn on for drive simplicity
- Simpler system design
Applications
- Radar transmitter power supplies
- Radar pulse modulators
- Capacitor discharge circuits
- High voltage power supplies
- AC switches
- HV circuit breakers
- Pulser circuits
Technical specifications
| max. Voltage | 1700 V | |
| Saturation voltage | 6 V | |
| Assembly | SMD | |
| Enclosure | SOT-227 | |
| Max. current | 75 A | |
| Version | single | |
| min. operating temperature | -55 °C | |
| max. operating temperature | 150 °C | |
| Power dissipation | 625 W |
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Logistics
| Country of origin | KR |
| Customs tariff number | 85411000 |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |