IXBF55N300 | Littelfuse
IGBT, IXBF55N300AH
Order No.: 74P0719
EAN: 4099891775841
MPN:
IXBF55N300
Unit Price (€ / pc.)
137.3498 € *
Available: 0 pcs.
Leadtime: 43 Weeks **
IGBT, IXBF55N300, Littelfuse
BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device.
Features
- High power density
- High frequency operation
- Low conduction losses
- MOS gate turn on for drive simplicity
- Easy to mount
Applications
- Switched-mode and resonant-mode power supplies
- Uninterruptible Power Supplies (UPS)
- Laser and X-ray generators
- Capacitor discharge circuits
- High voltage pulser circuits
- High voltage test equipment
- AC switches
Technical specifications
| Version | single | |
| Enclosure | I4-PAK | |
| max. Voltage | 3000 V | |
| Max. current | 86 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Saturation voltage | 3.2 V | |
| Power dissipation | 375 W |
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Logistics
| Country of origin | PH |
| Customs tariff number | 85411000 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
