PSRAM Memory, IS66WVQ8M4DALL-200BLI, Integrated Silicon Solution INC
The IS66WVQ8M4DALL-200BLI is an integrated memory device containing 32Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 8M words by 4 bits. The device supports a Quad DDR interface, which is compatible with JEDEC standard x4 xSPI Flash. The device supports Very Low Signal Count (7 signal pins; SCLK, CS#, DQSM, and 4 SIOs), Hidden Refresh Operation, and Automotive temperature (A2, -40°C to +105°C) operation. Due to DDR operation, the minimum transferred data size is a byte (8 bits) through 4 SIO pins.
Features
- Source Synchronous Output signal during Read Operation (DQSM)
- Data Mask during Write Operation
- Configurable Latency for Read/Write
- Supports Variable Latency mode and Fixed Latency mode
- Configurable Drive Strength
- Supports Wrapped Burst mode and Continuous Burst mode
- Supports Deep Power Down mode