IS66WV1M16EBLL-70BLI | Integrated Silicon Solution INC

Ultra Low Power Pseudo Cmos Static Ram, IS66WV1M16EBLL-70BLI, Integrated Silicon Solution INC

The IS66WV1M16EBLL-70BLI is a high-speed, 16M bit static RAM organized as 1M words by 16 bits. It is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields a high-performance and low power consumption device. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access.

Features

• Three State Outputs
• Data Control for Upper and Lower bytes