High-Speed Asynchronous Cmos Static Ram, IS62WV102416BLL-25TLI, Integrated Silicon Solution INC
The IS62WV102416BLL-25TLI is a high-speed, 16M-bit static RAM organized as 1024K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption device. When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is low, CS2 is high and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
Features
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- CS1 power-down
- TTL compatible interface levels
- Industrial and Automotive Temperature Support
- Data control for upper and lower bytes
