IS43DR86400E-25DBL | Integrated Silicon Solution INC
DRAM, 512 Mbit, TFBGA-60, Integrated Silicon Solution INC IS43DR86400E-25DBL
Order No.: 54S0446
MPN:
IS43DR86400E-25DBL
Unit Price (€ / pc.)
3.9263 € *
Standard delivery time from the manufacturer is: 1 Week
SDRAM, IS43DR86400E-25DBL, Integrated Silicon Solution INC
ISSI's 512 Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls
Features
- Double data rate interface: two data transfers per clock cycle
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- 4 internal banks for concurrent operation
- Posted CAS and programmable additive latency
- Adjustable data-output drive strength, full and reduced strength options
- On-die termination (ODT)
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Enclosure | TFBGA-60 | |
| Assembly | SMD | |
| Memory size | 512 Mbit | |
| Voltage | 1.7-1.9 V | |
| Access time | 0.4 s | |
| Clock frequency | 400 MHz | |
| Technology | SDRAM | |
| min. operating temperature | 0 °C | |
| max. operating temperature | 85 °C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| MSL | MSL 3 |
| Customs tariff number | 85423261 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |