Flash Memory, IS34ML01G081-BLI, Integrated Silicon Solution INC
The IS34ML01G081-BLI is a 128M x 8bit with spare 4M x 8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1,024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 400us and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block.
Features
- Flexible & Efficient Memory Architecture
- Highest performance
- Reliable CMOS Floating Gate Technology
- Efficient Read and Program modes
- Command Register Operation
- Cache Program Operation for High
- Advanced Security Protection
- Hardware Data Protection