IRLR3110ZTRPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, DPAK, IRLR3110ZTRPBF
Order No.: 54S1038
MPN:
IRLR3110ZTRPBF
SP001574010
Unit Price (€ / pc.)
1.1186 € *
Standard delivery time from the manufacturer is: 14 Weeks
Power MOSFET, IRLR3110ZTRPBF, INFINEON
Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
Features
- Optimized for broadest availability from distribution partners
- Logic level: Optimized for 10 V gate drive voltage, capable of 4.5 V gate drive voltage
- Industry standard surface-mount power package
- Capable of being wave-soldered
- Halogen-free
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=4,5V | 16 mΩ | |
| drain-source on resistance RDS (on) max @VGS=10V | 14 mΩ | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Enclosure | DPAK | |
| Version | N channel |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Reel with 2,000 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |