IRLML2060TRPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, SOT-23, IRLML2060TRPBF
Order No.: 54S1073
MPN:
IRLML2060TRPBF
SP001578644
Unit Price (€ / pc.)
0.2237 € *
Standard delivery time from the manufacturer is: 14 Weeks
Power MOSFET, IRLML2060TRPBF, INFINEON
The StrongIRFET power MOSFET is optimized for low RDS(On) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Features
- 650 V avalanche rugged CoolMOS with built-in startup cell
- Quasiresonant operation till very low load
- Active burst mode operation for low standby input power (< 0.1 W)
- Digital frequency reduction with decreasing load for reduced switching loss
- Built-in digital soft-start
Applications
- Small power supply such as Blu-ray, DVD player, set-top box, game console, smart meter, charger and auxiliary power of high power system such as LED TV
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 480 mΩ | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Enclosure | SOT-23 | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 6.7x10<sup>-10</sup> C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | PH |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |