IRLL014NTRPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, SOT-223, IRLL014NTRPBF
Order No.: 54S1077
MPN:
IRLL014NTRPBF
SP001578654
Unit Price (€ / pc.)
0.3213 € *
Standard delivery time from the manufacturer is: 12 Weeks
Power MOSFET, IRLL014NTRPBF, INFINEON
Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Silicon optimized for applications switching below < 100 kHz
- Industry standard surface mount package
- Standard pinout allows for drop-in replacement
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Gate Charge Qg @10V (nC) | 1.4x10<sup>-8</sup> C | |
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 140 mΩ | |
| Version | N channel | |
| max. operating temperature | 150 °C | |
| Enclosure | SOT-223 | |
| min. operating temperature | -55 °C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Reel with 2,500 pieces |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |