IRFZ46ZSTRLPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, D2PAK, IRFZ46ZSTRLPBF
Order No.: 54S1042
MPN:
IRFZ46ZSTRLPBF
SP001571826
Unit Price (€ / pc.)
0.9758 € *
Standard delivery time from the manufacturer is: 14 Weeks
Power MOSFET, IRFZ46ZSTRLPBF, INFINEON
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Dynamic dv/dt rating
- Lead-free
- Green product (RoHS compliant)
- Halogen free
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Gate Charge Qg @10V (nC) | 3.1x10<sup>-8</sup> C | |
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 13.6 mΩ | |
| Version | N channel | |
| max. operating temperature | 175 °C | |
| Enclosure | D2PAK | |
| min. operating temperature | -55 °C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | MX |
| Original Packaging | Reel with 800 pieces |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |