IRFZ24NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 17 A, TO-220, IRFZ24NPBF
Unit Price (€ / pc.)
0.357 € *
Available in 5 Days: 850 pcs. - if ordered today
MOSFET, IRFZ24NPBF, Infineon Technologies
The IRFZ24NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
Technical specifications
| max. Voltage | 55 V | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 70 mΩ | |
| Enclosure | TO-220 | |
| Max. current | 17 A | |
| Power loss | 45 W | |
| Assembly | THT | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 2x10<sup>-8</sup> C |
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Logistics
| Original Packaging | Bar with 5,451 pieces |
| Customs tariff number | 85412900 |
| Country of origin | MX |
Compliance
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |